Ferromagnetism in magnetically doped III-V semiconductors.

Theory of ferromagnetism in planar heterostructures of „Mn,III...-V semiconductors

A density-functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density-functional theory are the charge and spin densities of the itinerant carriers and the charge and localized spins of the impurities. The theory is applied to study the Curie temperature of planar heterostructures of III-V ...

Ferromagnetism in III-V and II-VI semiconductor structures

The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated semiconductors is briefly reviewed. The experimental results for III-V semiconductors, where Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds , in which the ferromagnetism has been observed for the modulation-doped p-type Cd1−xMnxTe/Cd1−y−zMgyZnzTe:N heterostruc...

Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

Electric-field control of ferromagnetism in magnetic semiconductors at room temperature has been actively pursued as one of the important approaches to realize practical spintronics and non-volatile logic devices. While Mn-doped III-V semiconductors were considered as potential candidates for achieving this controllability, the search for an ideal material with high Curie temperature (T(c)>300 ...

Nickel-Doped Ceria Nanoparticles: The Effect of Annealing on Room Temperature Ferromagnetism

Nickel-doped cerium dioxide nanoparticles exhibit room temperature ferromagnetism due to high oxygen mobility within the doped CeO2 lattice. CeO2 is an excellent doping matrix as it can lose oxygen whilst retaining its structure. This leads to increased oxygen mobility within the fluorite CeO2 lattice, leading to the formation of Ce3+ and Ce4+ species and hence doped ceria shows a high propensi...

Ferromagnetism in (III,Mn)V Semiconductors